Simulation of Single-Diode Equivalent Model of Polycrystalline Silicon Solar Cells

摘要

A solar module is composed of photons of different energies, and some are absorbed at the ip-n/i junction. A single-diode equivalent model is used to describe the electronic properties of solar cells. The theory as well as the construction and working of photovoltaic cells using single-diode method are also presented. So, choosing a electrical equivalent model can is based on area in which we would like to realize for study of solar cell characteristics. Parameters solar cell (Short-Circuit Current, Open-Circuit Voltage) are changed due to changing the light intensity and temperature. In the current paper we present the effect of temperature, series resistance and shunt resistance on the (P-V) characteristics simulated in Matlab/Simulink.