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首页> 外文期刊>International Journal of Engineering Trends and Technology >High Performance & Low Power CMOS Based DRAM Memories for ASP based Applications
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High Performance & Low Power CMOS Based DRAM Memories for ASP based Applications

机译:基于ASP的高性能和低功耗CMOS DRAM存储器

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摘要

Dynamic random access memory (DRAM) cells offer favourable circumstances over static arbitrary access memory (SRAM) cells because of their diminished size and loose requirements on gadget estimating proportions. For over 10 years, DRAM has been serving as
机译:动态随机存取存储器(DRAM)单元比静态任意存取存储器(SRAM)单元具有优越的环境,因为它们的尺寸减小并且对小工具估计比例的要求不严格。十多年来,DRAM一直是

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