The n-type macroporous silicon samples were prepared by electrochemical anodization of n-typesilicon wafers in etching solution of HF(40%):EtOH(99.5%)=1:1 with different current density for 20min. The dissolution of n-type silicon wafers in etching solution conform Faraday's laws ofelectrolysis. The fabricated n-type macroporous silicon with different porosity and thickness corrosionin 1.0 M NaOH was systemically studied by weight loss measurements, potentiodynamic polarizationmeasurements and scanning electron microscope. Results show that the corrosion rate of n-typemacroporous silicon in 1.0 M NaOH increases with anodization current density and porosityincreasing, respectively. In addition, the increase of corrosion rate for n-type macroporous siliconprepared with relative higher anodization current density was determined by the activation energy.
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机译：通过在不同电流密度的HF（40％）：EtOH（99.5％）= 1：1蚀刻溶液中对n型硅片进行电化学阳极氧化20分钟，制备了n型大孔硅样品。 n型硅晶片在蚀刻溶液中的溶解符合法拉第电解定律。通过失重测量，电势极化测量和扫描电子显微镜系统地研究了在1.0 M NaOH中制备的不同孔隙率和厚度腐蚀的n型大孔硅。结果表明，随着阳极氧化电流密度和孔隙率的增加，n型大分子硅在1.0 M NaOH中的腐蚀速率分别增加。另外，通过活化能确定相对较高的阳极氧化电流密度制备的n型大孔硅的腐蚀速率的增加。
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