Ni-SiO₂ Nano Composite as a MISFET Gate Dielectric and Electrochemical Impedance Spectroscopy Investigation for This Process

摘要

NiO-SiO2 can be used in a variety of devices, such as in circuit boards and detectors, including odorsensors, due to its porous structure. Owing to these specific properties, these composites attract theattention of many researchers. To study the effect of Ni-nano particles on NiO-SiO2 composition, wehave demonstrated a series of experiments to synthesize different size and structured shape of NiO- SiO2 composition. The methods of sol-gel with using XRD (X-ray Diffraction), SEM (ScanningElectron Microscopy) and TEM (Transmission Electron Microscopy) techniques are used to determinethe optimum conditions of obtaining composition and getting good gate dielectric for the future ofMISFET (Metal- Insulator- Semiconductor- Field- Effect- Transistor) devices. The obtained resultsshow that increase in silicon oxide content and synthesizing temperature change the compositestructure, in that an amorphous structure (or nanoscale crystallites) with 4:1; NiO:SiO2 may beconsidered as an alternative gate dielectric. In continuous, the effect of NiO-SiO2 composition oncharge transfer resistance (Rct) investigated with using electrochemical impedance spectroscopy (EIS)method in the presence of 1 mM K4[Fe(CN)6] material. Result also shows that NiO-SiO2 compositioncan reduce electrical conductivity electrode and increase charge transfer resistance in the presence of 1mM K4[Fe(CN)6].