Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate

摘要

Gallium nitride (GaN) films have been grown on the sapphire substrate with and without carbon- nanotubes (CNTs). The stripy defects distribution of the GaN film on the CNTs patterned sapphiresubstrate (CPSS) coincides with the morphology of the CNTs bundles. The localized dislocation7 -2 density of the GaN layer near the CNTs on the CPSS decreases to 4.7210 cm . The confocalscanning electroluminescence microscopy image of the GaN LED on CPSS reveals stripyluminescence intensity distribution. The results directly demonstrate that the CNTs can reduce thedislocation of the GaN film and improve the electrical and optical properties of the GaN LED.