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首页> 外文期刊>International Journal of Electrochemical Science >Surface Morphology and Electrical Properties of Pulse Electrodeposition of NiFe Films on Copper Substrates in Ultrasonic Field
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Surface Morphology and Electrical Properties of Pulse Electrodeposition of NiFe Films on Copper Substrates in Ultrasonic Field

机译:超声场在铜基体上脉冲电沉积镍铁薄膜的表面形貌和电学性能

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NiFe films were pulse electrodeposited on conductive copper substrates under galvanostatic mode withand without the presence of an ultrasonic field at different pulse current magnitudes and duty cycles.The optimum deposition condition was found to be at a current magnitude of 40 mA and a duty cycleof 50.00% under ultrasonic treatment. This deposition condition has significantly reduced the surfaceroughness from 39.01 .1 nm to 6.96 1.1 nm and the spherical grain size in the range from 579.40nm 623.30 nm to 29.00 nm 46.90 nm. On the other hand, the resistivity was reduced to 19.86m from 54.00 m as the Ni content increased from 76.08% to 80.12 % for achieving goodstoichiometry for NiFe thin films. Through the optimization study, the deposition current is observedto be the dominant factor in determining the single phase deposition of NiFe film whereas ultrasonicfield and duty cycle significantly reduces the surface roughness and the spherical grain size, all ofwhich combine to reduce film resistivity.
机译:在恒电流模式下,在有和没有超声波场的情况下,以不同的脉冲电流大小和占空比将NiFe薄膜脉冲电沉积在导电铜基板上,发现最佳沉积条件是电流大小为40 mA和占空比为50.00%在超声波处理下。这种沉积条件已将表面粗糙度从39.01 .1 nm大大降低到6.96 1.1 nm,球形颗粒尺寸从579.40nm 623.30 nm降低到29.00 nm 46.90 nm。另一方面,为了实现NiFe薄膜的化学计量,Ni的含量从76.08%增加到80.12%,电阻率从54.00m降低到19.86m。通过优化研究,观察到沉积电流是决定NiFe薄膜单相沉积的主要因素,而超声场和占空比显着降低了表面粗糙度和球形晶粒尺寸,所有这些因素共同降低了薄膜的电阻率。

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