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首页> 外文期刊>Ingeniare: revista chilena de ingenieria >Síntesis de películas delgadas de TiO2 por el método SILAR y estudio de la influencia del recocido en las propiedades estructurales, morfológicas y ópticas
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Síntesis de películas delgadas de TiO2 por el método SILAR y estudio de la influencia del recocido en las propiedades estructurales, morfológicas y ópticas

机译:SILAR法合成TiO2薄膜并研究退火对结构,形貌和光学性质的影响

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摘要

PreparationandcharacterizationofTiOsub2/subfilmsweremade.FilmsweresynthesizedonglasssubstratesbytheSILAR(SuccessiveIonicLayerAdsorptionandReaction)method.Thepreparationconsistedof150cyclesofasuccessiveandalternateimmersionofsubstratesintheprecursorsolutionandindistilledwaterat353K.GrowingwasconductedattwoconditionsoftheprecursorsolutionwhichcontainedTiClsub3/subandNHsub2/subCONHsub2/sub:atroomtemperatureandat343K.Afterthegrowth,filmswereannealedat723Kfor2hours.Regardingcharacterization,sampleswerestudiedusingXRD,SEMandUV#45;Vis.Structuralcharacterizationresultsshowedthat,ingeneral,thefilmspresentedanamorphouscrystallinestructureexceptthosewhichweregrownwithprecursorsolutionat343Kandthermallytreatedafterthegrowths,whichpresentedananatasecrystallinestructure.Concerningtheirmorphology,agranularstructureandarandomdistributionofaflower#45;likestructurewereobserved.Grainsizesdidnotchangesignificantlyafterannealing.Theopticalstudywascarriedouttakingintoaccountanindirecttransitionalloweddeterminingthebandgapenergytobearound3.1eV.Thisvalue,whichistypicalforTiOsub2/sub,decreasesafterannealing,usualforthistypeoffilms./font
机译:PreparationandcharacterizationofTiO <子> 2 filmsweremade.FilmsweresynthesizedonglasssubstratesbytheSILAR(SuccessiveIonicLayerAdsorptionandReaction)method.Thepreparationconsistedof150cyclesofasuccessiveandalternateimmersionofsubstratesintheprecursorsolutionandindistilledwaterat353K.GrowingwasconductedattwoconditionsoftheprecursorsolutionwhichcontainedTiCl <子> 3 andNH <子> 2 CONH <子> 2 :atroomtemperatureandat343K.Afterthegrowth ,filmswereannealedat723Kfor2hours.Regardingcharacterization,sampleswerestudiedusingXRD,SEMandUV#45; Vis.Structuralcharacterizationresultsshowedthat,ingeneral,thefilmspresentedanamorphouscrystallinestructureexceptthosewhichweregrownwithprecursorsolutionat343Kandthermallytreatedafterthegrowths,whichpresentedananatasecrystallinestructure.Concerningtheirmorphology,agranularstructureandarandomdistributionofaflower#45; likestructurewereobserved.Grainsizesdidnotchangesignificantlyafterannealing.Theopticalstudywascarriedouttakingintoaccountanindirecttransit离子允许将带隙能确定在3.1eV左右。对于TiO 2 而言,该值通常在退火后减小,通常适用于此类薄膜。

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