Independent-Gate FinFET Circuit Design Methodology

摘要

—FinFET, which is a double-gate field effect transistor (DGFET), is more versatile than traditional single-gate field effect transistors because it has two gates that can be controlled independently. Usually, the second gate of FinFETs is used to dynamically control the threshold voltage of the first gate in order to improve circuit performance and reduce leakage power. However, we can also utilize the second gate to implement circuits with fewer transistors. This is important since area efficiency is one of the main concerns in modern circuit design. In this paper, a methodology for effectively synthesizing logic circuits using both gates of FinFETs as inputs is presented. Simulation results show that independent-gate FinFET circuit implementation has significant advantages over single-gate FinFET circuit implementation in terms of power consumption and cell area.