EFFECT OF INTERDIFFUSION AND ELECTRIC FIELD ON RESONANT STATES AND CURRENT-VOLTAGE CHARACTERISTIC OF GaAs/AlxGa1-xAs DOUBLE-BARRIER RESONANT STRUCTURE

摘要

Theeffectofinterdiffusionandelectricfieldonresonantstatesandcurrent-voltagecharacteristicinGaAs/AlxGa1-xAsdouble-barrierstructureisinvestigated.TheSchr?dingerequationissolvedinthecomplexenergyapproachandtheresonanceenergies,aswellasthecorrespondingwavefunctionsareobtained.Thedependencesoftheresonanceenergiesandtheresonantcurrentdensityontheelectricfieldstrengthfordifferentvaluesofdiffusionlengthandtemperatureareobtained.Itisshownthatforcertainvaluesofdiffusionlengthandelectricfieldstrengththeappearanceofquasiboundstatesofsecondtypeandtheconversionofanumberofquasiboundstatesoffirsttypetocorrespondingstatesofsecondtypearepossible.Itisalsoshownthatatlowertemperaturesinterdiffusionleadstotheweakeningoftheeffectofelectricfieldontheresonantcurrentdensitywhileatroomtemperaturetheeffectofelectricfieldbecomesstrongerduetointerdiffusion.