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Improvement in Jc performance below liquid nitrogen temperature for SmBa2Cu3Oy superconducting films with BaHfO3 nano-rods controlled by low-temperature growth

机译:低温生长控制的BaHfO3纳米棒对SmBa2Cu3Oy超导膜在液氮温度以下Jc性能的改善

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For use in high-magnetic-field coil-based applications, the critical current density (Jc) of REBa2Cu3Oy (REBCO, where RE = rare earth) coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the Jc for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO3 (BHO) nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720?°C, by using a seed layer technique (Ts = 720?°C film). The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1) × 103μm?2 of small (diameter: 4 ± 1 nm), discontinuous nano-rods that grew in various directions, was obtained. In Jc measurements, the Jc of the Ts = 720?°C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The Jcmin (6.4 MA/cm2) of the former was more than 6 times higher than that (1.0 MA/cm2) of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m3 was realized; this value was comparable to the highest value recorded, to date.
机译:为了在基于高磁场线圈的应用中使用,必须相对于磁场方向各向同性地改善REBa2Cu3Oy(REBCO,其中RE =稀土)涂层导体的临界电流密度(Jc)。这些改进必须在这些应用程序的运行条件下实现。在这项研究中,通过控制SmBCO膜中BaHfO3(BHO)纳米棒的形貌,实现了Jc在各种磁场施加方向上的改进。我们制作了3.0卷。通过使用籽晶层技术(Ts = 720°C膜)在720°C的低生长温度下掺杂%BHO的SmBCO膜。低温生长导致BHO纳米棒的形态发生变化。实际上,获得了在多个方向上生长的小的(直径:4±1nm)不连续的纳米棒的高(3.1±0.1)×103μm2的数密度。在Jc测量中,在施加磁场的所有方向上,Ts = 720°C薄膜的Jc均高于未掺杂SmBCO薄膜的Jc。在3 T下,在40 K下,前者的Jcmin(6.4 MA / cm2)比后者的Jcmin(1.0 MA / cm2)高6倍以上。上述结果表明,出现了不连续的BHO纳米棒具有较高的数密度,在考虑的测量条件下会产生类似3D的通量钉扎。此外,在4.2 K和17 T下,实现的助焊剂钉扎力密度为1.6 TN / m3。该值与迄今为止记录的最高值相当。

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