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首页> 外文期刊>American Journal of Sensor Technology >Investigation on LaF3-Impregnated Porous Silicon Heterostructur as Potentionmetric Sensor for Fluoride Ion in Aqueous Medium
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Investigation on LaF3-Impregnated Porous Silicon Heterostructur as Potentionmetric Sensor for Fluoride Ion in Aqueous Medium

机译:LaF3浸渍的多孔硅异质结构作为水介质中氟离子的电位传感器的研究

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摘要

Impregnation of pores of porous silicon (PS) by Lanthanum Fluoride (LaF3) using a novel one-step chemical bath technique, and application of the LaF3-impregnated porous silicon (PS) structure (LaF3/PS) as a potentiometric fluoride ion sensor have been investigated in this article. The impregnation of LaF3 inside the pores of porous silicon was achieved using a chemical bath technique developed by this group. The Scanning Electron Microscopy (SEM) and EDX on the cross-section of LaF3/PS/Si structure confirmed the LaF3 film deposition inside the pores of PS. The heterostructure of LaF3/PS/Si was investigated as fluoride ion (F-) sensor in aqueous medium. The high specific area of PS was taken as the key subject to investigate the high fluoride sensitivity of the LaF3/PS structure in aqueous medium. When experimented with home made fluoride solution having various concentrations the annealed LaF3/PS/Si structure was found to detect the fluoride ion in aqueous solution. Its response was found linear in the fluoride concentration range of 2.28~4.28 pF. As capacitive sensor the overall fluoride sensitivity was found to be over-Nernstian (400 mV/pF). The experimental results indicate that LaF3-impregnated porous silicon structure (LaF3/PS) can be used as a high-sensitive fluoride-ion sensor in aqueous medium.
机译:使用新型的一步化学浴技术通过氟化镧(LaF3)浸渍多孔硅(PS)的孔以及将LaF3浸渍的多孔硅(PS)结构(LaF3 / PS)用作电位氟离子传感器的应用在本文中进行了调查。使用该小组开发的化学浴技术可以将LaF3浸渍在多孔硅的孔中。 LaF3 / PS / Si结构横截面的扫描电子显微镜(SEM)和EDX证实了LaF3膜沉积在PS孔内。研究了LaF3 / PS / Si的异质结构作为水性介质中的氟离子(F-)传感器。以高比表面积的PS为研究水介质中LaF3 / PS结构的高氟化物敏感性的关键课题。当用各种浓度的自制氟化物溶液进行实验时,发现退火的LaF3 / PS / Si结构可检测水溶液中的氟离子。发现其响应在2.28〜4.28 pF的氟化物浓度范围内呈线性。作为电容式传感器,发现总的氟化物灵敏度超过能斯特(400 mV / pF)。实验结果表明,LaF3浸渍的多孔硅结构(LaF3 / PS)可以用作水性介质中的高灵敏度氟离子传感器。

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