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首页> 外文期刊>American Journal of Nano Research and Applications >The Inter-play of the Opto-Electrical Properties of Cuprite and Tenorite Semiconductors for Solar Cell Application
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The Inter-play of the Opto-Electrical Properties of Cuprite and Tenorite Semiconductors for Solar Cell Application

机译:用于太阳能电池的铜铁矿和锰铁矿半导体的光电性能之间的相互作用

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The electrical and optical properties of cuprous oxide (Cusub2/subO) thin films prepared by D.C. reactive magnetron sputtering technique have been systematically studied. The influence of the film deposition conditions on the opto-electrical properties has been investigated and has helped to solve the puzzles of difficulties associated with preparation of high quality Cusub2/subO films. This is because there is usually co-deposition of phases of Cu, Cusub2/subO and CuO during the preparation of Cusub2/subO films. From this study, the films deposited at low substrate temperature were found to be less crystalline as compared to those deposited at high substrate temperature. This was corroborated by the drop in the sheet resistivity from ~55.08? cm to ~29.66? cm and the band gap from ~2.36eV to ~1.63eV for films prepared at substrate temperatures of 23°C and 170°C respectively. Annealing was also found to improve the film crystallinity.
机译:系统研究了用直流反应磁控溅射技术制备的氧化亚铜(Cu 2 O)薄膜的电学和光学性能。研究了成膜条件对光电性能的影响,并帮助解决了制备高质量Cu 2 O膜时遇到的难题。这是因为在制备Cu 2 O膜时,通常会同时沉积Cu,Cu 2 O和CuO的相。根据这项研究,发现与在高衬底温度下沉积的薄膜相比,在低衬底温度下沉积的薄膜结晶性较低。薄层电阻率从〜55.08?下降证实了这一点。厘米至〜29.66?分别在23°C和170°C的基板温度下制备的薄膜的cm值和〜2.36eV​​至〜1.63eV的带隙还发现退火可改善膜的结晶度。

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