Design of Pseudomorphic High Electron Mobility Transistor Based Ultra Wideband Amplifier Using Stepped Impedance Stub Matching

摘要

this paper, the design of an ultra wideband low noise amplifier using pseudomorphic high electron mobility transistor is described. The amplifier achieves a flat gain across the bandwidth and has minimized input and output return loss. The circuit also has a very low noise which is less than 2 dB. A detailed design is carried for low noise amplifier and simulated on serenade simulation tool. The amplifier is fabricated on RT duroid substrate (. r =2.2) and the results of simulated and fabricated amplifier have been compared. Impedance matching is achieved using a stepped impedance stub. The amplifier also consumes very low power for operation.