Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell Under Radiation Effect

摘要

The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined ,under (100) mw/cm2, 25℃. The best fabricated cell shows an open-circuit voltage before irradiation is (0.62 V) and after irradiation is (0.44 V). The short-circuit current density before irradiation is (34 mA/cm²) and after irradiation is (13 mA/cm²). The fill factor before irradiation is (53 %) and after irradiation is (44.7 %). The conversion efficiency (active area) before irradiation is (11.1 %) and after irradiation is (2.5%). was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side (frontwall). The cells are analyzed using I-V and P-V measurements, spectral response and 1/C²-V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of γ-radiation, which play a crucial role to improve the solar cell efficiency. γ-irradiation campaign with different doses has been carried out on a series of solar cells.