1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

摘要

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.