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首页> 外文期刊>American Journal of Chemical Engineering >The Exploration of Biasing Voltage Range on Implantable Microscale Electrochemical Sensors for Post-Surgery Cancer Recurrence Monitoring
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The Exploration of Biasing Voltage Range on Implantable Microscale Electrochemical Sensors for Post-Surgery Cancer Recurrence Monitoring

机译:用于手术后癌症复发监测的植入式微型电化学传感器偏置电压范围的探索

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Cancer surgery prognosis currently relies heavily on expensive diagnostics devices that have limited availability to patients. Minute-to-minute cancer recurrence monitoring device is needed. This paper investigates a novel design and simulation of Implantable micro-scale, minute-to-minute sensors of low manufacture cost. In Cadence simulation software, electrochemical sensor array circuit in 0.35 micron complementary metal oxide semiconductor (CMOS) process was designed. The simulated circuit supported both pH ISFET sensor and soluble oxygen level O2-FET sensor. The simulation result showed that the circuit’s output voltage has optimal sensitivity when ISFET Vsubgate/sub was biased at range of 2.29-2.49 volts. The output voltage in this biasing scheme varies linearly with the input voltage Vsubgate/sub making it ideal region for monitoring of cancer. The appropriate biasing of ISFET Vsubgate/sub voltage found by simulation is within 2.29-2.49 volts. In the case of pH measurements, the sensitivity can be up to 0.02 pH in a minute-to-minute pH probing device for cancer prognosis tracking. Other chemical probes such as O2-FET and Oct4 sensors are also supported by the device architecture.
机译:目前,癌症手术的预后严重依赖于昂贵的诊断设备,而这些设备对患者的可用性有限。需要分钟到分钟的癌症复发监测设备。本文研究了低制造成本的可植入式微型,分钟到分钟传感器的新颖设计和仿真。在Cadence仿真软件中,设计了采用0.35微米互补金属氧化物半导体(CMOS)工艺的电化学传感器阵列电路。仿真电路支持pH ISFET传感器和可溶性氧水平O2-FET传感器。仿真结果表明,当ISFET V gate 偏置在2.29-2.49伏范围内时,电路的输出电压具有最佳灵敏度。该偏置方案中的输出电压随输入电压V gate 线性变化,使其成为监测癌症的理想区域。通过仿真发现,ISFET V gate 电压的适当偏置在2.29-2.49伏之间。在进行pH测量的情况下,在每分钟的pH探测设备中,灵敏度最高可以达到0.02 pH,以追踪癌症的预后。设备体系结构还支持其他化学探针,例如O2-FET和Oct4传感器。

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