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Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

机译:外延应变和晶格失配对亚磁性FeRh薄膜的磁性和输运行为的影响

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We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO) and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO) displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.
机译:我们在具有不同晶格常数的不同单晶上生长了80 nm FeRh膜。在SrTiO 3 (STO)和MgO衬底上的FeRh膜表现出45°面内结构旋转的外延生长。相比之下,LaAlO 3 (LAO)上的FeRh显示出45°面内结构旋转和立方对立方关系的混合外延生长。由于不同的外延生长应变和晶格失配值,FeRh磁性相变的临界温度可以在405和360 K之间变化。此外,外部磁场可以以不同的速率将该临界温度转变为低温。 FeRh膜生长在不同的基材上。对于在不同基板上生长的FeRh薄膜,在320至380 K之间的不同温度下,磁阻出现最大值。

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