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Structural and proximity-induced ferromagnetic properties of topological insulator-magnetic insulator heterostructures

机译:拓扑绝缘体-磁绝缘体异质结构的结构和邻近感应铁磁性能

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The spontaneously broken time reversal symmetry can lead to the formation of an energy gap in the Dirac spectrum of the surface states of a topological insulator (TI) which can consequently give rise to a variety of interesting phenomena potentially useful for spintronics. In this work, we couple a non-magnetic TI to a high Curie temperature TC magnetic insulator to induce strong exchange interaction via the proximity effect. We have successfully grown 5 quintuple layer thick ternary TI (BixSb1-x)2Te3 films on atomically flat yttrium iron garnet (YIG) film with the combination of molecular beam epitaxy and pulsed laser deposition, in which the Fermi level position relative to the Dirac point is varied by controlling the Bi:Sb ratio. The anomalous Hall effect (AHE) and suppressed weak antilocalization (WAL) measured under out of plane magnetic fields reveal that the TI surface in contact with YIG is magnetized. Our high-quality (BixSb1-x)2Te3/Y IG heterostructure provides a tunable system for exploring the quantum anomalous Hall effect (QAHE) at higher temperatures in TI-based spintronic devices.
机译:自发中断的时间反转对称性会导致拓扑绝缘体(TI)的表面状态的Dirac光谱中形成能隙,从而可能引起自旋电子学潜在的各种有趣现象。在这项工作中,我们将非磁性TI与居里高温TC磁性绝缘体耦合,以通过邻近效应引起强烈的交换相互作用。我们已经成功地通过分子束外延和脉冲激光沉积相结合在原子平坦的钇铁石榴石(YIG)膜上生长了5层五层厚的三元TI(BixSb1-x)2Te3膜,其中费米能级位置相对于狄拉克点通过控制Bi:Sb的比率来改变。在平面外磁场下测得的异常霍尔效应(AHE)和抑制的弱反局部化(WAL)表明与YIG接触的TI表面已被磁化。我们的高质量(BixSb1-x)2Te3 / Y IG异质结构提供了一个可调谐系统,用于探索基于TI的自旋电子器件在较高温度下的量子异常霍尔效应(QAHE)。

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