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Fabrication of silicon nanotip arrays with high aspect ratio by cesium chloride self-assembly and dry etching

机译:通过氯化铯自组装和干法刻蚀制备高纵横比硅纳米尖端阵列

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摘要

Nanotip arrays with high aspect ratio, which have attracted much attention due to their potential applications, have been fabricated by many methods. Dry etching combined with self-assembly masks is widely used because of the convenience of dry etching and high throughput of self-assembly. In this paper, we report a method combining Cesium Chloride (CsCl) self-assembly with inductively coupled plasma (ICP) dry etching to fabricate silicon nanotip arrays with high aspect ratio and silicon nanotip arrays with aspect ratio 15 have been achieved after optimization of all parameters.
机译:具有高纵横比的Nanotip阵列由于其潜在的应用而备受关注,已通过多种方法制造。由于干法蚀刻的便利性和自组装的高产量,干法蚀刻与自组装掩模相结合被广泛使用。在本文中,我们报告了一种将氯化铯(CsCl)自组装与电感耦合等离子体(ICP)干法蚀刻相结合的方法,以制造具有高纵横比的硅纳米尖端阵列,并且在对所有元素进行优化之后,已经实现了纵横比为15的硅纳米尖端阵列参数。

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