Dielectric response and magnetoelectric coupling in single crystal gallium ferrite

摘要

Here we report the dielectric response and electric conduction behavior of magnetoelectric gallium ferrite single crystals studied using impedance analysis in time and temperature domain. The material exhibits two distinct relaxation processes: a high frequency bulk response and a low frequency interfacial boundary layer response. Calculated bulk capacitance as a function of temperature showed an anomaly at ferri- to paramagnetic transition temperature (～ 300 K), suggestive of magneto-dielectric coupling in the material. Interestingly, we also witness an abrupt change in the activation energy at ～ 220 K, in the vicinity of spin-glass transition temperature in GaFeO3.