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GALLIUM OXIDE MELT, GALLIUM OXIDE SINGLE CRYSTAL, GALLIUM OXIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE SINGLE CRYSTAL
GALLIUM OXIDE MELT, GALLIUM OXIDE SINGLE CRYSTAL, GALLIUM OXIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE SINGLE CRYSTAL
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机译:氧化镓熔体,氧化镓单晶,氧化镓基质以及制备氧化镓单晶的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which the disconnection of a gallium oxide melt of a neck part can be suppressed in the production of the gallium oxide single crystal, and the loss of a raw material associated with the evaporation of the gallium oxide melt can be suppressed in a necking step.;SOLUTION: A gallium oxide melt 2 having a density larger than a melt not containing an additive is obtained by charging a gallium oxide raw material containing the additive into a crucible 3 and heating the charged raw material, and then a seed crystal 10 is brought into contact with the gallium oxide melt 2. Thereby, a failure of necking is reduced and the evaporation loss of the raw material is reduced. Further, the gallium oxide melt 2 having a density of ≥4.85 g/cc is obtained by adjusting the content of the additive. Thereby, the failure of necking is reduced, and a temperature at which the seed crystal can be brought into contact is raised at least 10°C or more, in comparison with the case when a gallium oxide melt not containing the additive is used, and therefore, a gallium oxide single crystal having a lateral width of ≥2 inches and a straight body length of ≥2 inches can be grown.;COPYRIGHT: (C)2014,JPO&INPIT
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