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Organic transistors fabricated by contact coating at liquid-solid interface for nano-structures

机译:通过在液-固界面处接触涂层制备的纳米结构有机晶体管

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A contact coating method is developed to cover the nano-channels with 100 nm or 200 nm diameter and 400 nm depth with a poly(4-vinylphenol) (PVP). In such coating the nano-channels faces downwards and its vertical position is controlled by a motor. The surface is first lowered to be in immediate contact with the polyvinylpyrrolidone (PVPY) water solution with concentration from 1 to 5 wt%, then pulled at the speed of 0.004 to 0.4 mm/s. By tuning the pulling speed and concentration we can realize conformal, filled, top-only, as well as floating film morphology. For a reproducible liquid detachment from the solid, the sample has a small tilt angle of 3 degree. Contact coating is used to cover the Al grid base of the vertical space-charge-limited transistor with PVPY. Poly(3-hexylthiophene-2,5-diyl) (P3HT) as the semiconductor. The transistor breakdown voltage is raised due to base coverage achieved by contact coating.
机译:开发了一种接触涂层方法,用聚(4-乙烯基苯酚)(PVP)覆盖直径为100 nm或200 nm以及深度为400 nm的纳米通道。在这种涂层中,纳米通道朝下,其垂直位置由电动机控制。首先降低表面使其与浓度为1至5 wt%的聚乙烯吡咯烷酮(PVPY)水溶液直接接触,然后以0.004至0.4 mm / s的速度拉动。通过调整提拉速度和浓度,我们可以实现保形,填充,仅顶部以及浮膜形态。为了使液体从固体中分离出来,样品具有3度的小倾斜角。接触涂层用于用PVPY覆盖垂直空间电荷受限晶体管的Al栅极。聚(3-己基噻吩-2,5-二基)(P3HT)作为半导体。晶体管击穿电压由于接触涂层的基极覆盖而提高。

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