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Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures

机译:Si / SiGe量子级联结构的电子和光学性质的理论研究

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This paper reviews the basic properties of the SiGe alloy, presents some new results on its electronic and optical properties, and discusses the approach that has been followed to model quantum wells containing SiGe layers for applications in quantum cascade lasers. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schr?dinger equation. The calculations of optical parameters are used to optimize the Si/SiGe quantum cascade structures. Our results are found to be in good agreement with other calculations.
机译:本文回顾了SiGe合金的基本性能,提出了有关其电子和光学性能的一些新结果,并讨论了为包含在量子级联激光器中的SiGe层的量子阱建模所遵循的方法。约束电位的形状,子带能量及其本征包络波函数是通过求解一维薛定?方程来计算的。光学参数的计算被用来优化Si / SiGe量子级联结构。发现我们的结果与其他计算非常吻合。

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