First Tests of Superthin, Ion-implanted Silicon Strip Detectors Produced by Low-temperature Technique

摘要

A new technique of producing thin strip detectors was developed. Theprinciple of the technique is the application of a low-temperature bakingprocess instead of high temperature annealing. This thermal treatmentfollows the B+ ion implantation and evaporation of Al as detector contacts,which are created using a single adjusted Al mask in form of a comb. Thethickness distribution along X and Y directions for a thin silicon epitaxialmembrane was measured by the energy loss of particles from 241Am(hE i = 5:5 MeV). Preliminary tests of the first 5 m thin strip detectorhave been performed with particles and fission fragments from 252Cf. The E–E ion identification plots were created using a telescope consisting of our one thin strip of the E strip detector (5 m thick) followed by a typical 300 m Ortec E detector.