COMPARATIVE STUDIES OF THE PROPERTIES OF THERMAL ANNEALED Sb2S3THIN FILMS

摘要

In the present paper, we report the growth of antimony sulphide (Sb2S3) thin films by thermal evaporation method and detailed characterization of these films. The films were deposited from a Sb2S3powder at unheated substrates. We have analysed the structural, optical morphological and electrical properties of as deposited Sb2S3 films as well as those subjected to annealing in nitrogen atmosphere in the temperature range 100-300°C. As-deposited films are amorphous to X-ray diffraction (XRD). Polycrystalline antimony sulphide films are obtained and enhanced from the annealing temperature above 200°C. Both amorphous and polycrystalline antimony sulphide films have strong absorption coefficients in the range 104-5×105cm.1, and have direct band gaps with band energies 2-2.2 eV for the films annealed below 200°C and 1.7-1.8 eV for the films annealed at temperatures higher than 200°C. Inside, the thermal activation energy decreased with increasing annealed temperature for thins films treated in nitrogen atmosphere