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首页> 外文期刊>Chemical science >van der Waals forces control ferroelectric–antiferroelectric ordering in CuInP2S6 andCuBiP2Se6 laminar materials
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van der Waals forces control ferroelectric–antiferroelectric ordering in CuInP2S6 andCuBiP2Se6 laminar materials

机译:范德华力控制CuInP2S6和CuBiP2Se6层状材料中的铁电-反铁电有序

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We show how van der Waals (vdW) forces outcompete covalent and ionic forces to control ferroelectricordering in CuInP2S6 nanoflakes as well as in CuInP2S6 and CuBiP2Se6 crystals. While the self-assemblyof these 2D layered materials is clearly controlled by vdW effects, this result indicates that the internallayer structure is also similarly controlled. Using up to 14 first-principles computational methods, wepredict that the bilayers of both materials should be antiferroelectric. However, antiferroelectricnanoflakes and bulk materials are shown to embody two fundamentally different types of inter-layerinteractions, with vdW forces strongly favouring one and strongly disfavouring the other compared toferroelectric ordering. Strong specific vdW interactions involving the Cu atoms control this effect.Thickness-dependent significant cancellation of these two large opposing vdW contributions results ina small net effect that interacts with weak ionic contributions to control ferroelectric ordering.
机译:我们展示了范德华力(vdW)如何克服共价和离子力来控制CuInP2S6纳米片以及CuInP2S6和CuBiP2Se6晶体中的铁电有序性。虽然这些2D层状材料的自组装明显受vdW效应控制,但该结果表明内层结构也受到类似控制。使用多达14种第一性原理计算方法,我们预测两种材料的双层都应该是反铁电的。但是,反铁电纳米片和块状材料显示出两种根本不同的层间相互作用类型,与铁电有序相比,vdW力强烈偏爱其中一种而另一种则不利于另一种。涉及Cu原子的强特定vdW相互作用控制了此效应。这两个相对的较大vdW贡献的厚度依赖性显着抵消导致较小的净效应,该净效应与弱离子贡献相互作用以控制铁电有序。

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