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van der Waals forces control ferroelectric–antiferroelectric ordering in CuInP2S6 and CuBiP2Se6 laminar materials

机译:范德华力控制CuInP2S6和CuBiP2Se6层状材料中的铁电-反铁电有序

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摘要

We show how van der Waals (vdW) forces outcompete covalent and ionic forces to control ferroelectric ordering in CuInP2S6 nanoflakes as well as in CuInP2S6 and CuBiP2Se6 crystals. While the self-assembly of these 2D layered materials is clearly controlled by vdW effects, this result indicates that the internal layer structure is also similarly controlled. Using up to 14 first-principles computational methods, we predict that the bilayers of both materials should be antiferroelectric. However, antiferroelectric nanoflakes and bulk materials are shown to embody two fundamentally different types of inter-layer interactions, with vdW forces strongly favouring one and strongly disfavouring the other compared to ferroelectric ordering. Strong specific vdW interactions involving the Cu atoms control this effect. Thickness-dependent significant cancellation of these two large opposing vdW contributions results in a small net effect that interacts with weak ionic contributions to control ferroelectric ordering.
机译:我们展示了范德华力(vdW)如何克服共价键和离子力来控制CuInP2S6纳米薄片以及CuInP2S6和CuBiP2Se6晶体中的铁电有序性。尽管这些2D层状材料的自组装明显受vdW效应控制,但该结果表明内层结构也受到类似控制。使用多达14种第一性原理计算方法,我们预测两种材料的双层都应该是反铁电的。然而,显示出反铁电纳米薄片和块状材料体现出两种根本不同的层间相互作用类型,与铁电有序相比,vdW力强烈有利于一种而另一种不利于另一种。涉及铜原子的强特定vdW相互作用控制了这一效应。厚度相关的两个较大的相反vdW贡献的显着抵消导致一个小的净效应,该净效应与弱的离子贡献相互作用以控制铁电有序。

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