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Oxide Film Growth on Copper in Neutral Aqueous Solutions

机译:中性水溶液在铜上的氧化膜生长

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摘要

The copper electrode potentials measured by the open circuit potential method in strongly aerated solutions of SO4-2, Cl-, Br-, I-, CrO4-2, CO3-2, and NO2- with difference concentrations, till steady state values are attained. The copper electrode potentials of the all experiments increase from negative to more positive values indicating oxide film growth. The copper oxide film thickness attains maximum value at low and high concentrations of each aggressive and inhibitive anions respectively. The rate of oxide film thickening is determined by use the relation: E = a + b log t, where a and b are constants. The concentration of the inhibitive anions, CrO4-2, CO3-2, and NO2- that can withstand a certain concentration of the aggressive ions, , Cl-, Br-, and I-, varies due to the relation: logC inh. = A + n logC agg., where A and n are constants. The all experiments were investigated at 25oC in all electrolytes. Keywords: Copper; oxide growth; passivity; open circuit potential.
机译:在不同浓度的SO4-2,Cl-,Br-,I-,CrO4-2,CO3-2和NO2-的强充气溶液中,通过开路电势法测量的铜电极电势,直到达到稳态值。所有实验的铜电极电势从负值增加到更正值,表明氧化膜生长。分别在侵蚀性和抑制性阴离子的低浓度和高浓度下,氧化铜膜厚度均达到最大值。氧化膜的增厚速率通过以下关系式确定:E = a + b log t,其中a和b为常数。可以承受一定浓度的侵蚀性离子Cl-,Br-和I-的抑制性阴离子CrO4-2,CO3-2和NO2-的浓度因以下关系而变化:logC inh。 = A + n logC agg。,其中A和n为常数。所有实验均在25oC下所有电解质中进行。关键字:铜;氧化物生长被动性开路电位。

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