Fabrication of CIGS films by one-step pulseelectrodeposition on Mo/SLG substrates

摘要

In this study, we used low-cost non-vacuum electrochemical coating methodsto prepare Cu (In 1-x Ga x ) Se 2 precursor films on Mo/SLG substrates for the CIGS absorber applications. To find the most suitable growth conditions, we applied two types of electrodeposition conditions: the co nstantpotentialelectrodeposition and pulsed electrodeposition . To examine the material properties of the film, t he surface morphology, composition, and crystal structure analyses of the CIGS films were investigated b y scanning electron microscope (SEM), energy dispersive spectroscop y (EDS) and X -ray diffraction (XRD), respectively.The results sho w that pulse electrodeposition process with an appropriate duty cycle, pulse period and depositionvoltage could significantly improve the CIGS film quality. The pulse deposited CIGS films show promises for future CIGS solar cell applications.