Influence of Ga composition on CuInGaSe₂ films using one-step electrochemical deposition methods

摘要

CIGS film was formed using one-step electrochemical deposition at various deposition potential voltages in solution with diverse pH values. Multiple material analyses such as X-ray diffraction (XRD) analysis, scanning electron microscope (SEM) images, energy dispersive spectroscopy (EDS), and electron probe micro-analyzer (EPMA) images were used to examine the electro-deposition parameters. UV spectrometer was performed to measure the bandgap of the CIGS thin film. A highest Ga composition could be obtained at the most negative voltage of -3.3V and the smallest pH value of 1.6 in our experiment. However, an inferior material property and worse crystalline phase might come with a high Ga concentration. The band gap of the electro-deposited CIGS film with Cu:In:Ga:Se ratio of 1:0.52:0.30:1.98 could achieve 1.16 eV. The electrodeposited CIGS film shows promises for future solar cell applications.