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首页> 外文期刊>Chalcogenide Letters >Investigations on physical properties of nanostructured ZnTe thin films prepared by DC reactive magnetron sputtering
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Investigations on physical properties of nanostructured ZnTe thin films prepared by DC reactive magnetron sputtering

机译:直流反应磁控溅射制备纳米结构ZnTe薄膜的物理性能研究

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摘要

Nanostructured ZnTe thin films were deposited on glass substrates by DC reactive magnetron sputtering technique. The depositions were carried out by varying the substrate temperature from RT to 350 o C. X-ray diffraction patterns shows that ZnTe thin films are polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction. The crystallite size and the intensity of XRD peaks increases with the increase of substrate temperature which implies better crystallinity takes place at higher temperature. The electrical resistivity of the films decreases with the increase of substrate temperature. The optical band gap values of ZnTe thin films are varied from 2.35 to 2.61 eV with the increase of substrate temperature and refractive index of the films are decreased from 2.90 to 2.66 with the increase of substrate temperature.
机译:通过直流反应磁控溅射技术在玻璃基板上沉积了纳米结构的ZnTe薄膜。沉积是通过将基板温度从RT更改为350℃来进行的。X射线衍射图表明ZnTe薄膜本质上是多晶的,立方结构在(1 1 1)方向上表现出较好的取向。晶体尺寸和XRD峰的强度随衬底温度的升高而增加,这意味着在更高的温度下会发生更好的结晶度。膜的电阻率随着基板温度的升高而降低。 ZnTe薄膜的光学带隙值随衬底温度的升高而从2.35降至2.61 eV,随着衬底温度的升高薄膜的折射率从2.90降至2.66 eV。

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