Electrodeposition of CdSe layers of various thickness to improve the photocatalytic performance of the CdS/CdSe bilayer structure

摘要

CdS thin films were prepared using the chemical bath deposition (CBD) process and annealed in argon atmosphere. The grain size and light absorbance increased after annealing. The CdSe layer was electrodeposited on a CdS film galvanostatically employing various for deposition times. The resulting films were studied using XRD, FESEM, UV-Vis spectroscopy and electrochemical impedance spectroscopy to characterize their structural, morp hological, and photoelectrochemical characteristics. The resulting CdS/CdSe bilayer structure exhibits significant enhancements in optical absorption, photocurrent density, and photoconversion efficiency. In particular, the CdS/CdSe (6 min) sample exhibited a maximum photocurrent density of 8 mA/cm 2 and maximum photoconversion efficiency o f 4.90%.