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首页> 外文期刊>Chalcogenide Letters >AC PHOTOCONDUCTIVITY BEHAVIOUR OF ELECTRON BEAM EVAPORATED CdSe FILMS
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AC PHOTOCONDUCTIVITY BEHAVIOUR OF ELECTRON BEAM EVAPORATED CdSe FILMS

机译:电子束蒸发的CdSe薄膜的交流光电导行为

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Cadmium selenide(CdSe) thin films were deposited by the electron beam evaporation technique on glass substrates maintained at different temperatures in the range 30 - 300°C using the laboratory synthesized CdSe powder as the source. The films were polycrystalline with hexagonal structure. Optical bandgap of 1.67 eV was obtained. Atomic force microscopy studies indicated increase of grain size with substrate temperature. AC photoconductivity studies indicated The photosensitivity increased with substrate temperature
机译:使用实验室合成的CdSe粉末作为源,通过电子束蒸发技术将硒化镉(CdSe)薄膜沉积在保持在30-300°C的不同温度下的玻璃基板上。膜是具有六边形结构的多晶。获得1.67 eV的光学带隙。原子力显微镜研究表明晶粒尺寸随基材温度的增加而增加。 AC光电导性研究表明,光敏性随基材温度的升高而增加

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