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RESISTANCE AND RESISTIVITIES OF PbS THIN FILMS USING POLYETHYLENIMINE BY CHEMICAL BATH DEPOSITION

机译:聚乙烯亚胺通过化学浴沉积法制备的PbS薄膜的电阻率和电阻率

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In this work resistance and resistivities of PbS thin films by chemical bath deposition using Polyethylenimine as complexing agent are presented. A series of resistance and resistivity values of thin films obtained at different deposition times of 7, 10 and 13 minutes were evaluated and compared. The obtained films were chemically characterized by X-Ray Photoelectron and Raman spectroscopy confirming the presence of lead and sulfur as PbS. Thickness of the films was measured by ellipsometric spectroscopy; the values were in the range of 80 to 100 nm. Resistivity of the films was measured indirectly using an integrator circuit, the results show that resistivity values vary as a function of the deposition time. PEI films showed a low transmission in the visible range about 2 to 5% and an irregular absorption in the range of 300 to 1050 nm. Roughness of the films was characterized by atomic force microscopy showing values of mean square roughness of 16 nm, presenting different orientation of the clusters and pyramidal shapes.
机译:在这项工作中,提出了使用聚乙烯亚胺作为络合剂通过化学浴沉积法制备的PbS薄膜的电阻和电阻率。评价和比较在7、10和13分钟的不同沉积时间下获得的薄膜的一系列电阻和电阻率值。通过X射线光电子和拉曼光谱对获得的膜进行化学表征,证实了铅和硫作为PbS的存在。膜的厚度通过椭偏光谱法测量。该值在80至100nm的范围内。使用积分电路间接测量膜的电阻率,结果表明电阻率值随沉积时间而变化。 PEI膜在约2%至5%的可见光范围内显示出低透射率,并在300至1050 nm范围内显示不规则吸收。膜的粗糙度通过原子力显微镜表征,显示16nm的均方粗糙度值,表现出簇的不同取向和金字塔形状。

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