INFLUENCE OF COMPOSITION ON THE OPTICAL BAND GAP IN A-Ge20Se80-XInXTHIN FILMS

摘要

Thin films of Ge10Se80-xInx(x = 0, 5, 10, 15, 20) bulk material were prepared by thermal evaporation technique at a base pressure of ~10-6 mbar. Amorphous nature of the bulk and deposited thin films was confirmed by x-ray diffraction technique. Optical transmission spectra of the films were taken in the range of 400-1200 nm. The optical band gap was determined and the variation in the band gap is explained in terms of average bond energy of the system