PHOTOINDUCED CHANGES IN VACUUM EVAPORATED AMORPHOUS GESE2FILMS

摘要

With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphous GeSe2films were investigated with the X-ray diffraction (XRD), infrared absorption (IR), scanning electron microscope (SEM), transmitting electron microscope (TEM) and transmittance spectra analysis. It was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 oC for 1 h in Ar air. The magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. By sides, photoinduced crystallization was also observed in the exposed regions of GeSe2films and more of it was observed with stronger intensity of illumination light