Properties of thin films based on paraffin doped chalcogenides, prepared by pulse laser deposition(

摘要

A chalcogenide material of composition Se42S58, doped by 10 wt.% paraffins has been prepared as thin films by pulsed laser deposition. The structural properties of the films have been investigated by X-ray diffraction. Sample stabilization was carried out by annealing at temperatures around 100 oC