Cache Resiliency Techniques for a Low-Voltage RISC-V Out-of-Order Processor in 28-nm CMOS

摘要

Architecture-level assist techniques enable low-voltage operation by tolerating errors in SRAM-based caches. A line recycling (LR) technique is proposed to reuse faulty cache lines that fail at low voltages to correct errors with only 0.77% level-2 (L2) area overhead. LR can either save 33% of cache capacity loss from line disable or allow further reduction in minimum operating voltage (Vmin). Bit bypass implemented with SRAM extends the tag array to log error entries providing multibit-error protection for the metadata with minimal area overhead. An open-source out-of-order superscalar processor that implements the 64-bit RISC-V instruction set architecture is built to validate the proposed cache resiliency techniques. The 2.7 mm × 1.8 mm chip includes one core operating at 1.0 GHz at nominal 0.9 V with 1 MB of L2 cache in a 28-nm HPM process. LR reduces Vmin to 0.47 V, improving energy efficiency by 43% with negligible impact on CPI.