Functionalization of flat Si surfaces with inorganic compounds—Towards molecular CMOS hybrid devices

摘要

Covalent modification of flat silicon surfaces is a key step in integrating CMOS technology and molecular electronics that may lead to novel hybrid microelectronic devices. While much of the research has been focused on the functionalization of Si by organic compounds, interest in the functionalization with metal-containing species has intensified in recent years because of the unique attributes of inorganic species including rich redox characteristics and high ground state spins. Described in this short review are (i) synthetic approaches to immobilize inorganic compounds; (ii) structural, spectroscopic and voltammetric techniques for characterization of molecular layers; and (iii) preliminary device fabrication.