机译:通过弱单元感知错误纠正提高3D DRAM容错能力
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY;
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY;
Institute of Artificial Intelligence and Robotics, Xi’an Jiaotong University, Xi’an, Shaanxi, China;
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY;
Institute of Artificial Intelligence and Robotics, Xi’an Jiaotong University, Xi’an, Shaanxi, China;
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY;
Error correction codes; Three-dimensional displays; Redundancy; Fault tolerant systems; DRAM chips;
机译:抽象容错:一种无需误差校正的模型理论方法用于容错和故障补偿
机译:使用低成本擦除和纠错方案提高商品DRAM系统的可靠性
机译:改进的多重故障感知放置策略:减少数字电路的开销和错误率
机译:有效地实现20纳米以下技术节点的弱单元感知DRAM错误容错
机译:扩展量子误差校正:新的连续测量协议和改进的容错开销。
机译:出版商更正:弱微腔作为光明和容错发光电化学电池的启动器
机译:3D-NoC系统中TSV寿命可靠性的热感知在线容错方法