首页> 外国专利> Memory-mapped two-dimensional error correction code for multi-bit error tolerance in DRAM

Memory-mapped two-dimensional error correction code for multi-bit error tolerance in DRAM

机译:Memory映射的二维纠错码DRAM中的多位误差容差的校正码

摘要

One embodiment provides a system and method for facilitating error-correction protection in a storage device. In response to a write request, the system organizes a block of data in a two-dimensional (2D) array, forms a plurality of first-dimension sub-blocks by dividing the 2D array along a first dimension, and forms a plurality of second-dimension sub-blocks by dividing the 2D array along a second dimension. In response to determining that second-dimension error correction code (ECC) encoding is enabled, the system performs second-dimension ECC encoding on the second-dimension sub-blocks to generate a set of second-dimension ECC bits and performs first-dimension ECC encoding on the first-dimension sub-blocks and the second-dimension ECC bits to generate a set of first-dimension ECC bits. The system writes the data block along with the second-dimension ECC bits and the first-dimension ECC bits to the storage device. The data block and the second-dimension ECC bits are mapped to separate physical addresses in the storage device.
机译:一个实施例提供了一种用于促进存储设备中的纠错保护的系统和方法。响应于写入请求,系统通过沿第一维层划分2D阵列来组织二维(2D)阵列中的数据块,形成多个第一维子块,并形成多个秒 - 通过沿第二维划分2D阵列来缩小子块。响应于确定启用了第二维纠错码(ECC)编码,系统对第二维子块执行第二维ECC编码,以生成一组第二维度ECC位并执行第一维ECC在第一尺寸子块和第二维ECC位上编码以生成一组第一维度ECC位。该系统将数据块与第二维ECC位和第一维ECC比特一起写入存储设备。数据块和第二维ECC位被映射到存储设备中的物理地址。

著录项

  • 公开/公告号US11218165B2

    专利类型

  • 公开/公告日2022-01-04

    原文格式PDF

  • 申请/专利权人 ALIBABA GROUP HOLDING LIMITED;

    申请/专利号US202016875827

  • 发明设计人 JIAN CHEN;YING ZHANG;

    申请日2020-05-15

  • 分类号H03M13;H03M13/09;G11C29/52;G11C29/42;G06F11/10;

  • 国家 US

  • 入库时间 2024-06-14 22:38:23

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