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The influences of bismuth antimony additives and cobalt manganese dopants on the electrical properties of ZnO-based varistors

机译:铋锑添加剂和钴锰掺杂剂对ZnO基压敏电阻电性能的影响

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This paper investigates the influences of additive contents and the additive ratio to dopants on the electrical characteristics of ZnO-based varistors. Bismuth and antimony are chosen as the additives while cobalt and manganese are selected as the dopants in this study. Our previous works discussed the influences of the initial additive content on the electrical characteristics of ZnO-based varistors without considering the dopant content and the weight loss during processing and sintering. Therefore, in this study, we fabricated varistors with same initial formula after sintering for 1, 3 and 5 h, respectively. The sintering temperatures were 950 and 1100℃. After sintering, the additive content and dopant content of the varistors were measured using an inductively coupled plasma-atomic emission spectrometer (ICP). The experimental results showed that when the additive-content varies from 1.44 to 3.59 at % and the dopant/additive ratio changes from 0.16 to 0.69, the nonlinear coefficient, α, reaches up to 48 and the breakdown field E_(bk) is to 895 V mm~(-1). The average grain size is 2.7 μm. The α value is higher with the higher additive-content and the lower dopant/additive ratio and vice versa. The breakdown field E_(bk) is increased with the additive-content increasing and sintering temperature lowering at a given dopant-content. The grain size is increased with the increase in sintering temperature while the bismuth concentration decreased. The observed effects are related to the quality of grain boundaries and the conductivity of grains.
机译:本文研究了添加剂含量和添加剂比例对掺杂剂对ZnO基压敏电阻电性能的影响。本研究选择铋和锑作为添加剂,而选择钴和锰作为掺杂剂。我们以前的工作讨论了初始添加剂含量对ZnO基压敏电阻电特性的影响,而没有考虑掺杂含量和在加工和烧结过程中的重量损失。因此,在这项研究中,我们分别烧结了1、3和5小时后,制成了具有相同初始公式的压敏电阻。烧结温度为950和1100℃。烧结后,使用电感耦合等离子体原子发射光谱仪(ICP)测量压敏电阻的添加剂含量和掺杂剂含量。实验结果表明,当添加量从1.44 at到3.59 at%,掺杂剂/添加剂比从0.16到0.69时,非线性系数α达到48,击穿场E_(bk)达到895。 V毫米〜(-1)平均晶粒尺寸为2.7μm。添加剂含量越高,掺杂剂/添加剂比越低,则α值越高,反之亦然。在给定的掺杂剂含量下,击穿场E_(bk)随着添加剂含量的增加和烧结温度的降低而增加。随烧结温度的升高晶粒尺寸增大,而铋浓度降低。观察到的影响与晶界的质量和晶粒的电导率有关。

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