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Three-dimensional asymptotic antiplane shear stress fields at the front of interfacial crack/anticrack type discontinuities in trimaterial bonded plates

机译:三材料键合板界面裂纹/抗裂纹类型不连续面的三维渐近反平面剪切应力场

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摘要

An eigenfuntion expansion method is employed for obtaining three-dimensional asymptotic displacement and stress fields in the vicinity of the front of a crack/anticrack type discontinuity weakening/reinforcing an infinite pie-shaped trimaterial plate, of finite thickness, formed as a result of bimaterial (matrix/semiconductor/ARC plus reaction product/scatterer) deposit over a substrate (fiber/ARC/semi-conductor). The wedge is of general (unsymmetric) geometrical configuration, and is subjected to anti-plane shear (mode III) far field loading. Each material is isotropic and elastic, but with different material properties. The material 2 or the substrate is always taken to be a half-space, while the wedge aperture angle of the material 1 is varied to represent varying composition of the bimaterial deposit. Numerical results pertaining to the variation of the mode III eigenvalues (or stress singularities) with various wedge aperture angles of the material 1 (reaction product/scatterer), are also presented. Hitherto generally unavailable results, pertaining to the through-thickness variations of stress intensity factors for symmetric parabolic load and its skew-symmetric counterpart that also satisfy the boundary conditions on the top and bottom surfaces of the trimaterial plates under investigation, form also an important part of the present investigation.
机译:本征函数展开方法用于获得由双材料形成的有限厚度的无限扇形三材料板的裂纹/抗裂纹类型的不连续性的弱化/加固前部附近的三维渐近位移和应力场(矩阵/半导体/ ARC加上反应产物/散射体)沉积在基板(纤维/ ARC /半导体)上。楔块具有一般的(非对称)几何构型,并且承受反平面剪切(模式III)的远场载荷。每种材料都是各向同性和弹性的,但是具有不同的材料特性。材料2或基材始终被视为半空间,而材料1的楔形孔径角则发生变化,以表示双材料沉积物的变化成分。还给出了与材料1(反应产物/散射体)的各种楔形孔径角随模式III特征值(或应力奇异性)变化有关的数值结果。到目前为止,关于对称抛物线载荷及其偏斜对称应力强度因子的整个厚度变化(也满足所研究的三材料板顶面和底面的边界条件)的迄今为止尚无法获得的结果也是重要的部分目前的调查。

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