首页> 外文学位 >Three-dimensional singular stress fields in the vicinity of crack, anticrack and interfacial-contact junction (triple junction) fronts in tricrystal and trimaterial composite plates.
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Three-dimensional singular stress fields in the vicinity of crack, anticrack and interfacial-contact junction (triple junction) fronts in tricrystal and trimaterial composite plates.

机译:三晶体和三材料复合板中裂纹,抗裂和界面接触结(三重结)前缘附近的三维奇异应力场。

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摘要

Three classes of elastic trimaterial/tricrystal plates, of finite thickness, and weakened/reinforced by crack/anticrack/interfacial-contact junction (triple junction) type discontinuities, are investigated. Such systems are formed as a result of bimaterial deposit, comprising matrix/semiconductor (material 3) plus reaction product/scatterer (material 1), over a flat fiber/reinforcement/substrate (material 2). The first and second groups, made of isotropic (polycrystalline) and monoclinic phases, are analyzed asymptotically using three-dimensional eigenfunction and modified eigenfunction expansion approaches, respectively, based on the separation of (i) variables and (ii) the thickness-variable (in conjunction with the Eshelby-Stroh type formalism). The third class of tricrystalline systems is composed of one diamond cubic (C) phase deposit (material 3), the remaining two phases being FCC (Au, material 1) and appropriately rotated Si3N4 serving as the substrate (material 2). This class of problems is asymptotically solved using a mixed eigenfunction expansion type method, based on the partial separation of z-variables technique, in conjunction with a mixed Frobenius type series in terms of affine-transformed x-y variables. The crack/anticrack type discontinuity always lies between materials 2 (substrate) and 3 (matrix/semiconductor).;Numerical results pertaining to the variation of the mode I/II/III eigenvalues (or stress singularities) with modular ratios, as well as with the wedge aperture angle of the material 1 are presented. For a crack lying between materials 2 and 3, material 1 acts as an amplifier or reducer of the severity of the stress intensity of the bimaterial interfacial crack, depending on the effective stiffness of the third phase (material 1) in comparison with that of material 3. More important, a crack always propagates under mixed I/II/III mode in monocrystalline diamond. The present results confirm this fact for a trimaterial system, with one diamond cubic (C) phase. Finally, hitherto unavailable results, pertaining to the through-thickness variation of stress intensity factor or stress singularity coefficient for symmetric (i) exponentially decaying, (ii) exponentially growing, (iii) parabolic and (iv) parabolic plus triangular distributed loads and their skew-symmetric counterparts that also satisfy the boundary conditions on the top and bottom surfaces of the trimaterial/tricrystalline plates under investigation, bridge a longstanding gap in the stress singularity/interfacial fracture mechanics literature.
机译:研究了三类有限厚度的弹性三材料/三晶体板,它们通过裂纹/抗裂纹/界面接触接合(三重接合)类型的不连续性而减弱/增强。这样的系统是通过在扁平纤维/增强材料/基材(材料2)上沉积双材料而形成的,该材料包括基质/半导体(材料3)加上反应产物/散射体(材料1)。基于(i)变量和(ii)厚度变量(a)的分离,分别使用三维特征函数和改进的特征函数展开方法渐近分析由各向同性(多晶)相和单斜晶相组成的第一组和第二组。结合Eshelby-Stroh型形式主义)。第三类三晶系统由一个金刚石立方(C)相沉积物(材料3)组成,其余两相为FCC(Au,材料1)和适当旋转的Si3N4作为衬底(材料2)。基于仿射变换的x-y变量,使用基于z变量技术部分分离的混合特征函数展开类型方法和混合Frobenius类型系列,渐近解决了此类问题。裂纹/抗裂纹类型的不连续性始终位于材料2(基体)和材料3(基体/半导体)之间;数值结果涉及模I / II / III特征值(或应力奇异性)随模数比的变化以及示出了材料1的楔形开口角。对于位于材料2和3之间的裂纹,材料1充当双材料界面裂纹的应力强度严重程度的增强或降低,这取决于第三相(材料1)与材料的有效刚度3.更重要的是,裂纹总是在单晶金刚石中以I / II / III混合模式传播。目前的结果证实了对于具有一个金刚石立方(C)相的三材料系统这一事实。最后,迄今为止无法获得的结果,涉及对称(i)指数衰减,(ii)指数增长,(iii)抛物线和(iv)抛物线加三角形分布载荷的应力强度因子或应力奇异性系数的整个厚度变化在研究的三材料/三晶板的顶面和底面上也满足边界条件的斜对称对应物,弥合了应力奇异性/界面断裂力学文献中一个长期存在的空白。

著录项

  • 作者

    Yoon, Jinyong.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 214 p.
  • 总页数 214
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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