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Pressureless Sintering of Microscale Silver Paste for 300 °C Applications

机译:适用于300°C应用的微尺度银浆的无压烧结

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High-temperature die attach is necessary to fabricate digital and analog thick film modules for 300 °C applications. Sintered Ag is a promising die attach material, but typically requires pressure during sintering for larger die. Pressureless sintering of a microscale Ag paste has been evaluated with Au and Ag die metallization on Au, Ag, and PdAg thick film metalized substrates. With Au metallization on either the die or the substrate, degradation of shear strength rapidly occurred with aging at 300 °C. Formation of a dense Ag layer and a depletion region near the Au surface was observed with 300 °C aging. This was attributed to the rapid surface diffusion of Ag on Au surfaces at 300 °C. This did not occur with Ag thin film die metallization and Ag and PdAg thick film metallization. After 8000 h at 300 °C, mm Ag metalized die on Ag thick film substrates could not be sheared at 100 kg of applied force. The same was true for mm Ag metalized die on PdAg thick film substrates after 2000 h at 300 °C.
机译:在300°C的应用中,数字芯片和模拟厚膜模块的制造需要高温芯片贴装。烧结的银是一种很有前途的芯片附着材料,但通常在烧结过程中需要较大的芯片压力。用Au和Ag模头在Au,Ag和PdAg厚膜金属化基材上进行金属化,评估了微细Ag糊料的无压烧结。在管芯或基板上进行金金属化处理后,在300°C时效时,剪切强度迅速下降。随着300℃的老化,观察到在Au表面附近形成致密的Ag层和耗尽区。这归因于在300°C下Ag在Au表面上的快速表面扩散。 Ag薄膜裸片金属化以及Ag和PdAg厚膜金属化不会发生这种情况。在300°C下经过8000小时后,在100公斤的外加力下无法剪切mm厚的Ag厚膜基底上的Ag金属化模具。在300°C下经过2000 h后,在PdAg厚膜基板上的mm Ag金属化管芯也是如此。

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