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首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Substrate Integrated Waveguide Quasi-Elliptic Filter Using Slot-Coupled and Microstrip-Line Cross-Coupled Structures
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Substrate Integrated Waveguide Quasi-Elliptic Filter Using Slot-Coupled and Microstrip-Line Cross-Coupled Structures

机译:使用缝隙耦合和微带线交叉耦合结构的基片集成波导准椭圆滤波器

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摘要

This paper proposes a quasi-elliptic filter with slot coupling and nonadjacent cross coupling based on the substrate integrated waveguide (SIW) cavity. The slots etched on the top metal plane of SIW cavity are used to produce electrical coupling, and the cross coupling is realized by the microstrip transmission line above the SIW cavity. The coupling strength is mainly controlled by the width and height of the slot. The length of the open-ended microstrip line controls the sign of the cross coupling. The cross coupling with different signs are used in the filter to produce a pair of transmission zeros (TZs) at both sides of the passband. In order to prove the validity, a fourth-order SIW quasi-elliptic filter with TZsat both sides of the passband is fabricated in a two-layer printed circuit board. The measured insertion loss at a center frequency of 3.7 GHz is 1.1 dB. The return loss within the passband is below -18 dB with a fractional bandwidth of 16%. The measured results are in good agreement with the simulated results.
机译:本文提出了一种基于缝隙耦合和不相邻交叉耦合的准椭圆滤波器。在SIW腔的顶部金属平面上蚀刻的槽用于产生电耦合,并且通过SIW腔上方的微带传输线实现交叉耦合。耦合强度主要由槽的宽度和高度控制。开放式微带线的长度控制交叉耦合的符号。在滤波器中使用具有不同符号的交叉耦合在通带的两侧产生一对传输零(TZ)。为了证明其有效性,在两层印刷电路板上制造了带通量两侧均为TZs的四阶SIW准椭圆滤波器。在中心频率为3.7 GHz时测得的插入损耗为1.1 dB。通带内的回波损耗低于-18 dB,分数带宽为16%。测量结果与模拟结果吻合良好。

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