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机译:偏压偏差对混合氧化物薄膜晶体管电学参数的影响
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, USA;
SchooI for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, USA,SchooI for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, USA;
electrical stress; a-IGZO; thin film transistors; degradation; threshold voltage; drain to source resistance; power factor; equivalent circuit;
机译:偏压偏差对混合氧化物薄膜晶体管电学参数的影响
机译:双活性层氧化硅锌/氧化锌薄膜晶体管的电性能和偏置应力稳定性的改善
机译:随温度变化的偏置应力引起的非晶铟镓锌氧化物薄膜晶体管的电不稳定性
机译:热应力和动偏应力对混合氧化物薄膜晶体管电性能的影响
机译:铟镓锌氧化物和锌锡氧化物薄膜晶体管的制造工艺评估和负偏压照明应力研究。
机译:固溶氧化锌薄膜的形貌对薄膜晶体管电学特性的影响
机译:偏压偏差对混合氧化物薄膜晶体管电学参数的影响