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Fractional-order Memristor Response Under DC and Periodic Signals

机译:直流和周期信号下的分数阶忆阻器响应

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摘要

Recently, there is an essential demand to extend the fundamentals of the conventional circuit theory to include the new generalized elements, fractional-order elements, and mem-elements due to their unique properties. This paper presents the relationships between seven different elements based on the four physical quantities and the fractional-order derivatives. One of them is the Fractional-order memristor, where the memristor dynamic is expressed by fractional-order derivative. This element merge the memristive and fractional-order concepts together where the conventional modeling becomes a special case. Moreover, the mathematical modeling of the fractional-order memristor is introduced. In addition, the response of applying DC, sinusoidal, and nonsinusoidal periodic signals is discussed. Finally, different numerical simulations are presented.
机译:近来,由于其独特的性质,迫切需要扩展常规电路理论的基础以包括新的广义元素,分数阶元素和记忆元素。本文介绍了基于四个物理量和分数阶导数的七个不同元素之间的关系。其中之一是分数阶忆阻器,其中忆阻器动态由分数阶导数表示。在传统建模成为特例的情况下,该元素将忆阻和分数阶概念合并在一起。此外,介绍了分数阶忆阻器的数学建模。此外,还讨论了施加DC,正弦和非正弦周期信号的响应。最后,给出了不同的数值模拟。

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