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Design and evaluation of a memristor-based look-up table for non-volatile field programmable gate arrays

机译:非易失性现场可编程门阵列的基于忆阻器的查找表的设计和评估

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摘要

This study presents the detailed design and analysis of a new memristor-based look-up table (LUT) for field programmable gate arrays (FPGAs). The proposed memory utilises memristors as storage elements with N-type metal–oxide–semiconductor transistors for row access. New WRITE and READ operations are proposed; the proposed LUT requires no additional circuit to handle the WRITE 1 (0) operation. The proposed method requires a RESTORE pulse only for the READ 0 operation. Moreover, the WRITE operation of the proposed method requires three power lines and a RESTORE pulse only for the READ 0 operation, thus saving 25% READ time when compared with previous methods. In addition, the proposed method does not require the REFRESH pulse and does not dissipate power during stand-by mode. Extensive simulation results are presented with respect to different operational features such as normalised state parameter, pulse width and LUT size. In addition to a circuit-level evaluation, the proposed LUT scheme has also been assessed with respect to FPGA implementation. Simulation results using sequential benchmarks mapped on Spartan 4 and 5 FPGAs show that the proposed non-volatile LUT outperforms existing static random access memory cell-based LUTs in terms of performance.
机译:这项研究为现场可编程门阵列(FPGA)提供了一种新的基于忆阻器的查找表(LUT)的详细设计和分析。拟议的存储器利用忆阻器作为存储元件,并使用N型金属氧化物半导体晶体管进行行访问。提出了新的WRITE和READ操作;建议的LUT不需要额外的电路即可处理WRITE 1(0)操作。所提出的方法仅对于READ 0操作需要一个RESTORE脉冲。而且,所提出的方法的WRITE操作仅对于READ 0操作需要三根电源线和一个RESTORE脉冲,因此与以前的方法相比节省了25%的READ时间。此外,所提出的方法不需要REFRESH脉冲,并且在待机模式下不会消耗功率。针对不同的操作特性(如归一化状态参数,脉冲宽度和LUT大小),给出了广泛的仿真结果。除了电路级评估之外,还针对FPGA实施对了建议的LUT方案进行了评估。使用映射在Spartan 4和5 FPGA上的顺序基准测试的仿真结果表明,所提出的非易失性LUT在性能方面优于现有的基于静态随机存取存储单元的LUT。

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