Role of grooving angle of 14-nm-InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance

摘要

The authors investigate and physically analyse the effects of the angle of grooving (theta) on various analogues and RF parameters of InAs-channel quantum well MOSFETs with raised source/drain architecture at a 14-nm gate length. Moreover, harmonic distortion analysis is performed to examine the linearity and distortion of common source amplifiers built with such transistors. The findings reveal that the device with theta = 20 degrees exhibits significant improvement in transconductance efficiency (g(m)/I-DS), output resistance (r(d)), and voltage gain (A(v)) while showing degradation in transconductance (g(m)) compared to the corresponding parameter with theta = 90 degrees. Furthermore, the obtained results manifest that the total harmonic distortion drops to -47 dB for an amplifier built with the device having theta = 90 degrees compared to -22 dB obtained with theta = 20 degrees. Notably, as the angle of grooving increases from 20 degrees to 90 degrees, the gain bandwidth of the amplifier improves by 232% while the peak gain falls by 40%.